Abstract Degradation process of perovskite photovoltaic cells with Spiro-OMeTAD hole transport layer (HTL) has been monitored by means of capacitance spectroscopy. Detailed measurements of the capacitance as a function of the bias voltage revealed that the efficiency decline is accompanied by the doping level decrease of HTL at the perovskite interface. Together with the TOF-SIMS measurement, it is clearly demonstrated that one degradation mechanism is due to the diffusion of dopant in the HTL into the adjacent perovskite layer.

中文翻译：

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电容光谱显示 HTL 掺杂水平降低导致钙钛矿太阳能电池的降解

摘要 利用电容光谱法监测了具有 Spiro-OMeTAD 空穴传输层 (HTL) 的钙钛矿光伏电池的降解过程。作为偏置电压函数的电容的详细测量表明，效率下降伴随着钙钛矿界面处 HTL 掺杂水平的下降。与 TOF-SIMS 测量一起，清楚地证明了一种降解机制是由于 HTL 中的掺杂剂扩散到相邻的钙钛矿层。