Abstract In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.

中文翻译：

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原子级硅化钛单层超晶格的原位透射电子显微镜研究

摘要 在这项工作中，钛锗硅化物 (TiSiGex) 超晶格 (SL) 已成功制备。单层硅原子和双层反转硅化钛周期性地构建了这种新型超晶格。通过高分辨率环形暗场扫描透射电子显微镜 (ADF-STEM) 图像发现局部应变场是一个关键因素，由锗原子的逐渐分离产生。在过渡硅化物的形成过程中将排除锗原子。这种现象可以通过热力学偏好来解释。硅和锗之间发生了取代反应，这是由于两者的原子体积相似。换句话说，锗分离途径是基于取代发生的位置。最终，