Abstract Silicon wafer solidification on a substrate remains an important research topic. One of the major applications is in the production of kerf-free silicon wafers. In this study, we carried out in situ observations and temperature measurements to better understand the growth mechanism of silicon wafers on substrates. Silicon nitride and quartz substrates at cooling rates ranging from 5 K/min to 100 K/min were considered. Visual observations revealed that the growth of silicon proceeded with nucleation of solid strips, i.e., dendrites, which initially grew axially at high rates before expanding laterally. Furnace cooling parameters and the extent to which the substrate can sustain the undercooling were found to dictate the ensuing mode of growth and the trends experienced therein. Undercooling estimates, recalescence rates, solidification densities, and growth kinetics were discussed to discern their interrelation and explain their effects to the resulting nucleation and wafer growth behavior. Increasing cooling rate and undercooling for nucleation were found to consistently increase grain frequency as confirmed by electron backscatter diffraction analysis. Prevalence of certain grain orientation and the consequent increase in Σ3 grain boundaries was also discerned due to the preference of dendritic strips growth.

中文翻译：

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石英和氮化硅衬底上硅薄片生长的原位观察和温度分布研究

摘要 衬底上的硅晶片固化仍然是一个重要的研究课题。主要应用之一是生产无切口硅片。在这项研究中，我们进行了原位观察和温度测量，以更好地了解硅晶片在基板上的生长机制。考虑了冷却速率为 5 K/min 至 100 K/min 的氮化硅和石英衬底。目视观察表明，硅的生长随着实心条带（即枝晶）的成核而进行，枝晶最初以高速轴向生长，然后横向扩展。发现炉子冷却参数和基材能够承受过冷的程度决定了随后的生长模式和其中经历的趋势。过冷估计、再辉率、讨论了凝固密度和生长动力学，以辨别它们的相互关系并解释它们对产生的成核和晶片生长行为的影响。电子背散射衍射分析证实，增加冷却速度和成核过冷会持续增加晶粒频率。由于树枝状条带生长的偏好，还发现了某些晶粒取向的普遍性和随之而来的 Σ3 晶界的增加。