Nano-Micro Letters ( IF 31.6 ) Pub Date : 2020-10-27 , DOI: 10.1007/s40820-020-00527-w Jing Ning 1, 2 , Maoyang Xia 1, 2 , Dong Wang 1, 2 , Xin Feng 1, 2 , Hong Zhou 1, 2 , Jincheng Zhang 1, 2 , Yue Hao 1, 2
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Three types of Ni3Si2 were successfully fabricated by low-pressure all-solid melting-reconstruction chemical vapor deposition, and the growth pattern changed with the carbon source content.
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In a carbon-rich atmosphere, high-energy atoms bombard the Ni and Si surface, and reduce the free energy in the solid Ni–Si particles’ thermodynamic equilibrium, considerably catalyzing the growth of Ni–Si nanocrystals.
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Ni3Si2/NiOOH/graphene provides a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution and accelerates the electron exchange rate.
中文翻译:
用于全固态超级电容器的新型 Ni 3 Si 2 /NiOOH/石墨烯纳米结构的卓越赝电容存储
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采用低压全固态熔融-再造化学气相沉积法成功制备了三种类型的Ni 3 Si 2,其生长方式随碳源含量的变化而变化。
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在富碳气氛中,高能原子轰击 Ni 和 Si 表面,降低固体 Ni-Si 颗粒热力学平衡中的自由能,显着促进 Ni-Si 纳米晶体的生长。
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Ni 3 Si 2 /NiOOH/石墨烯提供大的比表面积,NiOOH在碱性溶液中抑制电极表面的绝缘并加速电子交换速率。