Design and modeling of microelectromechanical system (MEMS)-based piezoresistive pressure sensor are main requirements to fabricate application-oriented pressure sensor devices for the industry, i.e., nuclear power plants, aerospace and avionics, oil and gas, Internet of Things, wearable electronics and consumer electronics. In this research work, analytical modeling is presented to estimate the overall sensitivity of the MEMS technology-based piezoresistive pressure sensor. The sensitivity of a piezoresistive pressure sensor is estimated using the thin plate theory and the theory of piezoresistivity in silicon. The mechanical responses of a thin plate in terms of deflection and induced stresses are presented and discussed. The effects of geometrical parameters on deflection and induced stresses are analyzed using a ratio of half-edge length with the thickness (\(a/h\)) and a ratio of diaphragm edges (\(a/b\)). These ratio parameters are responsible for the sensitivity of the piezoresistive pressure sensor. Moreover, a comparative assessment is presented for the current model with a model available in the literature. Further, calculations of average stresses are carried out for the piezoresistor geometry of a small rectangular area. Thereafter, a quantitative variation in the calculated sensitivity is presented based on calculation with maximum stress and average stress. The calculated difference in overall sensitivity is found to be 3%. However, a significant reduction in average stresses as compared to maximum induced stresses is obtained as 28% and 36% change for stress X and stress Y, respectively.

基于微机电系统（MEMS）的压阻式压力传感器的设计和建模是制造面向应用的压力传感器设备的主要要求，该设备适用于以下行业：核电站，航空航天，航空电子，石油和天然气，物联网，可穿戴电子设备以及消费类电子产品。在这项研究工作中，提出了分析模型来估计基于MEMS技术的压阻压力传感器的整体灵敏度。使用薄板理论和硅中的压阻理论估算压阻压力传感器的灵敏度。提出并讨论了薄板在挠度和诱发应力方面的机械响应。\（a / h \））和膜片边缘的比率（\（a / b \））。这些比率参数负责压阻压力传感器的灵敏度。此外，对现有模型与文献中可用的模型进行了比较评估。此外，对于小矩形区域的压敏电阻几何进行平均应力的计算。此后，基于最大应力和平均应力的计算，得出了计算灵敏度的定量变化。发现总灵敏度的计算差异为3％。但是，与平均最大应力相比，平均应力显着降低，因为应力X和应力Y分别变化28％和36％。