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A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition
ChemRxiv Pub Date : 2020-10-23 Sydney Buttera, Polla Rouf, Petro Deminskyi, Nathan O'Brien, Sean Barry, Henrik Pedersen
ChemRxiv Pub Date : 2020-10-23 Sydney Buttera, Polla Rouf, Petro Deminskyi, Nathan O'Brien, Sean Barry, Henrik Pedersen
Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.
中文翻译:
用于原子层沉积的高质量氮化铝的低成本,高效率的TMA置换
酰胺基烷烃前体的合成,表征和用途,用于通过原子层沉积来沉积高质量和低杂质的氮化铝膜。这项研究强调了智能前驱体设计的重要性,以便以低成本和高效率沉积高质量的薄膜。
更新日期:2020-10-28
中文翻译:
用于原子层沉积的高质量氮化铝的低成本,高效率的TMA置换
酰胺基烷烃前体的合成,表征和用途,用于通过原子层沉积来沉积高质量和低杂质的氮化铝膜。这项研究强调了智能前驱体设计的重要性,以便以低成本和高效率沉积高质量的薄膜。