Flexible and transparent applications have become an emerging technology and have shifted to the forefront of materials science research in recent years. Transparent conductive oxide films have been applied for flat panel displays, solar cells, and transparent glass coatings. However, none of them can fulfill the requirements for advanced transparent flexible devices, such as high-frequency applications. Here, we present a promising technique for transparent flexible conducting oxide heteroepitaxial films: the direct fabrication of epitaxial molybdenum-doped indium oxide (IMO) thin films on a transparent flexible muscovite substrate. An n-type epitaxial IMO film is demonstrated with a mobility of 109 cm² V⁻¹ s⁻¹, a figure of merit of 0.0976 Ω⁻¹, a resistivity of 4.5 × 10⁻⁵ Ω cm and an average optical transmittance of 81.8% in the visible regime. This heteroepitaxial system not only exhibits excellent electrical and optical performance but also shows excellent mechanical durability. Our results illustrate that this is an outstanding way to fabricate transparent and flexible conducting elements for the evolution and expansion of next-generation smart devices.

灵活和透明的应用程序已成为新兴技术，并且近年来已转移到材料科学研究的前沿。透明导电氧化物膜已应用于平板显示器，太阳能电池和透明玻璃涂层。但是，它们都无法满足高级透明柔性设备（例如高频应用）的要求。在这里，我们提出了一种用于透明柔性导电氧化物异质外延膜的有前途的技术：在透明柔性白云母基底上直接制备外延掺杂钼的氧化铟（IMO）薄膜。展示了具有109 cm ²  V ^-1  s ^-1的迁移率，品质因数为0.0976Ω ^-1的n型外延IMO膜。， 在可见光区的电阻率为4.5×10 ^-5Ωcm，平均光学透射率为81.8％。该异质外延体系不仅表现出优异的电气和光学性能，而且表现出优异的机械耐久性。我们的结果表明，这是一种为下一代智能设备的演进和扩展制造透明而灵活的导电元件的出色方法。