Metal–organic frameworks (MOFs) offer disruptive potential in micro- and optoelectronics because of the unique properties of these microporous materials. Nanoscale patterning is a fundamental step in the implementation of MOFs in miniaturized solid-state devices. Conventional MOF patterning methods suffer from low resolution and poorly defined pattern edges. Here, we demonstrate the resist-free, direct X-ray and electron-beam lithography of MOFs. This process avoids etching damage and contamination and leaves the porosity and crystallinity of the patterned MOFs intact. The resulting high-quality patterns have excellent sub-50-nm resolution, and approach the mesopore regime. The compatibility of X-ray and electron-beam lithography with existing micro- and nanofabrication processes will facilitate the integration of MOFs in miniaturized devices.

金属有机框架（MOF）由于具有微孔材料的独特特性，在微电子和光电子学中具有破坏性的潜力。纳米级图案化是在微型固态设备中实现MOF的基本步骤。常规的MOF图案化方法具有分辨率低和图案边缘定义不佳的缺点。在这里，我们演示了MOF的无抗蚀剂，直接X射线和电子束光刻技术。此过程避免了蚀刻损坏和污染，并保留了图案化MOF的孔隙率和结晶度。产生的高质量图案具有出色的50 nm以下分辨率，并接近中孔体系。X射线和电子束光刻与现有的微细加工和纳米加工工艺的兼容性将促进MOF在小型设备中的集成。