This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature for the first time, focusing on cryogenic applications, down to 4.2 K. The back bias impact on device performance is evaluated. The results reveal that the threshold voltage tuning is found to be temperature independent, allowing extra drain current improvement. This is particularly interesting for short channel devices, whose drain current gain with temperature lowering is expected to be smaller in comparison with long channel MOSFETs. LFN is characterized by means of time-domain current sampling measurements. Moderate and strong inversion regimes are investigated. The carrier number with correlated mobility fluctuations model can well describe the 1/ ${f}$ noise behavior down to 4.2 K. The physical origin behind the drain current noise-to-signal power augmentation with temperature lowering could be mainly attributed to the normalized transconductance improvement.

中文翻译：

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低温应用中低至 4.2 K 的 22-nm FDSOI 的性能和低频噪声

这项工作展示了 22 纳米全耗尽绝缘体上硅 (FDSOI) CMOS 技术的性能和低频噪声 (LFN)。实验测量和分析首次作为温度的函数进行，重点是低温应用，低至 4.2 K。评估了反向偏置对器件性能的影响。结果表明，发现阈值电压调谐与温度无关，从而允许额外的漏电流改进。这对于短沟道器件尤其有趣，与长沟道 MOSFET 相比，随着温度降低，其漏极电流增益预计会更小。LFN 的特点是时域电流采样测量。研究了中度和强反演机制。