In this work, an evaluation of the performance of discrete elements intended for an ${L}$ -band high-temperature GaN-based LC-oscillator is carried out between room temperature and 300 °C. GaN high-electron mobility transistors (HEMTs) on sapphire substrate, metal–insulator–metal (MIM) capacitors, thin-film inductors, and resistors on sapphire and quartz substrates are fabricated and characterized through dc and ${S}$ -parameter measurements up to 20 GHz. The GaN HEMTs on sapphire achieved ${f}_{\text {t}}$ of 18 GHz and ${f}_{\text {max}}$ of 30 GHz at room temperature and ${f}_{\text {t}}$ of 11 GHz and ${f}_{\text {max}}$ of 21 GHz at 300 °C while maintaining dc gate leakage below 0.1 mA/mm at 300 °C. MIM capacitors are characterized at temperatures up to 300 °C and at frequencies up to 10 MHz, showing stable capacitance values with changes as small as 1.37% over the entire temperature range. Planar spiral inductors are characterized using ${S}$ -parameter measurements up to 20 GHz and 300 °C. While a temperature stable maximum oscillation frequency above 1 GHz is achieved, the quality factor degrades by up to 48% at 300 °C. A detailed analysis of the temperature dependence of the inductor is given.

中文翻译：

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对基于 GaN 的高温高频 LC 振荡器组件的评估

在这项工作中，评估了离散元件的性能，用于 ${L}$ 带高温 GaN 基 液晶显示器- 振荡器在室温和 300 °C 之间进行。蓝宝石衬底上的 GaN 高电子迁移率晶体管 (HEMT)、金属-绝缘体-金属 (MIM) 电容器、薄膜电感器以及蓝宝石和石英衬底上的电阻器是通过直流和石英衬底制造和表征的。 ${S}$ - 高达 20 GHz 的参数测量。蓝宝石上的 GaN HEMT ${f}_{\text {t}}$ 18 GHz 和 ${f}_{\text {max}}$ 30 GHz 在室温和 ${f}_{\text {t}}$ 11 GHz 和 ${f}_{\text {max}}$ 在 300 °C 时为 21 GHz，同时在 300 °C 时保持直流栅极泄漏低于 0.1 mA/mm。MIM 电容器的特性是在高达 300 °C 的温度和高达 10 MHz 的频率下，显示出稳定的电容值，在整个温度范围内的变化小至 1.37%。平面螺旋电感器的特点是使用 ${S}$ - 高达 20 GHz 和 300 °C 的参数测量。虽然实现了高于 1 GHz 的温度稳定最大振荡频率，但品质因数在 300 °C 时会下降多达 48%。给出了电感器温度依赖性的详细分析。