This article provides guidelines to design porous silicon (PS) layers regarding optimization of small-signal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-frequency measurements on 200-mm wafers and electromagnetic simulations up to 40 GHz. Using substrate resistivity below ${1}~\Omega $ cm allows the best tradeoff with minimized PS thickness.

中文翻译：

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衬底电阻率对多孔硅小信号射频特性的影响

本文提供了设计多孔硅 (PS) 层的指南，以优化射频 (RF) 无源结构中的小信号特性：插入损耗和串扰。结果基于对 200 毫米晶圆的高频测量和高达 40 GHz 的电磁模拟。使用下面的衬底电阻率 ${1}~\Omega $ cm 允许在最小化 PS 厚度的情况下进行最佳权衡。