A technology computer-aided design (TCAD) simulation framework of gas desorption induced by self-heating in carbon nanotube (CNT) field effect transistor (FET) gas sensors is presented. Its key feature is the use of temperature profiles extracted from electrothermal simulations to determine the change of the effective gas-induced doping concentration during the gas desorption phase. The approach allows to investigate the impact of geometrical and physical parameters, in particular the ones related to contacts, on the self-heating desorption process. The main conclusion is that, due to the nonuniform self-heating temperature profile, the near-threshold part of the IDS-VGS curves recover their pristine aspect faster than the rest of the characteristics.

中文翻译：

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CNT FET NO2 传感器中气体解吸的 TCAD 仿真框架


提出了碳纳米管（CNT）场效应晶体管（FET）气体传感器中自加热引起的气体解吸的技术计算机辅助设计（TCAD）模拟框架。其主要特点是利用从电热模拟中提取的温度曲线来确定气体解吸阶段有效气体诱导掺杂浓度的变化。该方法可以研究几何和物理参数，特别是与接触相关的参数，对自热解吸过程的影响。主要结论是，由于自加热温度分布不均匀，IDS-VGS 曲线的接近阈值部分比其他特性更快地恢复其原始状态。