A stochastic reaction–diffusion drift model is used to simulate the time kinetics of interface and bulk oxide traps responsible for bias temperature instability (BTI), stress-induced leakage current (SILC), and time-dependent dielectric breakdown (TDDB) in MOSFETs. Trap generation and passivation are calculated using dissociation and repassivation of trap precursors and simultaneous diffusion and/or drift of atomic, molecular, and/or ionic species. The average of multiple stochastic simulations is used to qualitatively explain the measured BTI and SILC data. The difference in BTI and SILC time kinetics, variation in SILC time kinetics across reports, and oxide thickness dependence of TDDB Weibull slope variation are also qualitatively explained.

中文翻译：

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MOSFET 中 BTI、SILC 和 TDDB 的界面和本体氧化物陷阱的时间动力学的随机框架

随机反应-扩散漂移模型用于模拟界面和体氧化物陷阱的时间动力学，这些陷阱负责 MOSFET 中的偏置温度不稳定性 (BTI)、应力引起的漏电流 (SILC) 和时间相关的介电击穿 (TDDB)。使用陷阱前体的解离和再钝化以及原子、分子和/或离子物质的同时扩散和/或漂移来计算陷阱生成和钝化。多个随机模拟的平均值用于定性解释测量的 BTI 和 SILC 数据。BTI 和 SILC 时间动力学的差异、各报告中 SILC 时间动力学的变化以及 TDDB Weibull 斜率变化的氧化物厚度依赖性也得到了定性解释。