An analytical 2-D model of double-gate metal–ferroelectric–insulator–semiconductor-negative-capacitance FET (MFIS-NCFET), using Green’s function approach, in the subthreshold region, is presented in this article. The explicit solution of coupled 2-D Landau–Devonshire and Poisson equations is analytically derived. Subsequently, an analytical and explicit model of subthreshold slope is developed from potential functions. The developed model includes quantum-mechanical effects, which considers not only geometrical confinements but also electrical confinements. The analytical solution of a 2-D nonhomogeneous Poisson equation coupled with the 1-D Schrödinger equation is used to obtain the potential function in the channel. The impact of the ferroelectric thickness ( ${t}_{\text {fe}}$ ) on quantum confinement is also studied. We find that larger ${t}_{\text {fe}}$ reduces the quantum confinement effect. Therefore, as ${t}_{\text {fe}}$ increases, threshold voltage roll-off with the variation in Si-body thickness decreases.

中文翻译：

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MFIS 负电容 FET 中短沟道效应的分析建模，包括量子限制效应

本文介绍了在亚阈值区域中使用格林函数方法的双栅极金属-铁电-绝缘体-半导体-负电容 FET (MFIS-NCFET) 的二维分析模型。耦合 2-D Landau-Devonshire 和 Poisson 方程的显式解是解析导出的。随后，从势函数开发了亚阈值斜率的分析和显式模型。开发的模型包括量子力学效应，它不仅考虑几何限制，还考虑电限制。二维非齐次泊松方程与一维薛定谔方程耦合的解析解用于获得通道中的势函数。铁电体厚度的影响（ ${t}_{\text {fe}}$ ) 还研究了量子限制。我们发现更大的 ${t}_{\text {fe}}$ 减少量子限制效应。因此，作为 ${t}_{\text {fe}}$ 增加，阈值电压滚降随着硅体厚度的变化而减小。