The impact of a single displacement defect on the performance of tunneling field-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point defect. The degradation depends on the trap energy level; the impact due to a deep trap is greater than that due to a shallow trap. The degradation becomes more profound as the defect location moves a certain distance from the source into the channel. The ON-state current is nearly unaffected by the same defect. The single defect effects were found to be more prominent for thinner channel devices.

中文翻译：

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单个位移缺陷对隧道场效应晶体管的影响

研究了单个位移缺陷对隧道场效应晶体管 (TFET) 性能的影响。发现 TFET 的关态漏电流和亚阈值摆动会因单点缺陷而降低。退化取决于陷阱能级；深陷阱的影响大于浅陷阱的影响。随着缺陷位置从源进入通道移动一定距离，退化变得更加严重。导通电流几乎不受相同缺陷的影响。发现单缺陷效应对于更薄的通道器件更为突出。