This article presents an accurate, reliability-aware statistical Berkeley short-channel IGFET Model 4 (BSIM4) compact model parameter generation methodology using the generalized lambda distribution (GLD) method. Using this methodology, compact model parameter sets can be generated “on the fly” beyond the limitation of the number of compact models extracted from the TCAD simulation. The generated unlimited parameter sets enable circuit designer for the statistical circuit simulation. An analytical model has been developed to interpolate TCAD simulation data points, which enables statistical compact model parameter sets to be generated at any aging level. The capability to generate such intermediate aging model parameters at trap densities that were not physically simulated has important application in statistical circuit simulation, opening up the possibility to include accurately reliability assessment in circuit design. An aging model that can transfer trap density to stress/aging time is an integral part of the presented methodology. The accuracy of the compact model parameter generation methodology is validated by comparing the new generated compact model parameter sets at an interpolated trap density, against physical “atomistic” 3-D TCAD simulation. The compact model parameter generation methodology enables the accurate investigation of the influence of statistical variability and bias temperature instability (BTI)-induced aging at circuit level.

中文翻译：

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可靠性感知统计 BSIM 紧凑模型参数生成方法

本文介绍了一种使用广义 lambda 分布 (GLD) 方法的准确、具有可靠性的统计伯克利短沟道 IGFET 模型 4 (BSIM4) 紧凑模型参数生成方法。使用这种方法，可以“即时”生成紧凑模型参数集，超出从 TCAD 模拟中提取的紧凑模型数量的限制。生成的无限参数集使电路设计人员能够进行统计电路仿真。已经开发出一种分析模型来插入 TCAD 仿真数据点，从而能够在任何老化水平上生成统计紧凑模型参数集。在未进行物理仿真的陷阱密度下生成此类中间老化模型参数的能力在统计电路仿真中具有重要应用，开辟了在电路设计中包括准确可靠性评估的可能性。可以将陷阱密度转移到应力/老化时间的老化模型是所提出方法的一个组成部分。紧凑模型参数生成方法的准确性通过将新生成的紧凑模型参数集在插值陷阱密度下与物理“原子”3-D TCAD 模拟进行比较来验证。紧凑的模型参数生成方法能够准确调查统计可变性和偏置温度不稳定性 (BTI) 引起的电路级老化的影响。紧凑模型参数生成方法的准确性通过将新生成的紧凑模型参数集在插值陷阱密度下与物理“原子”3-D TCAD 模拟进行比较来验证。紧凑的模型参数生成方法能够准确调查统计可变性和偏置温度不稳定性 (BTI) 引起的电路级老化的影响。紧凑模型参数生成方法的准确性通过将新生成的紧凑模型参数集在插值陷阱密度下与物理“原子”3-D TCAD 模拟进行比较来验证。紧凑的模型参数生成方法能够准确调查统计可变性和偏置温度不稳定性 (BTI) 引起的电路级老化的影响。