In this article, the ${C}$ – ${V}$ curve shift, trap densities responsiveness, and dynamic ${R}_{ON}$ of AlGaN/GaN/GaN:C (SH:C) and AlGaN/GaN/graded-AlGaN:Si/GaN:C (DH:Si/C) heterostructure Schottky barrier diodes (SBDs) have been systematically analyzed. Due to additional 3-D electrons in graded-AlGaN:Si layer, the composite 2-D–3-D channel of DH:Si/C has a higher carrier concentration. Reducing the OFF-state electric field strength through AlGaN:Si insert layer, a smaller positive shift of ${C}$ – ${V}$ curve is achieved under OFF-state stress. Due to the charge shielding effect of AlGaN:Si insert layer, trapping/detrapping effects in GaN:C buffer under the OFF-state stress are well suppressed. Compared with SH:C heterostructure, the trap density responsiveness of DH:Si/C heterostructure under OFF-state stress is significantly reduced. At the same time, trap density responsiveness of the upper channel is immune to OFF-state electric stress time. In addition, the proposed SBDs show lower ON-resistance with on reverse bias stress and better dynamic performance with on reverse stress time.

中文翻译：

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在断态应力下通过复合 2-D-3-D 通道异质结构改善 SBD 的 CV 曲线偏移、陷阱状态响应和动态 RON

在本文中， ${C}$ —— ${V}$ 曲线偏移、陷阱密度响应和动态 ${R}_{ON}$ 已经系统地分析了 AlGaN/GaN/GaN:C (SH:C) 和 AlGaN/GaN/graded-AlGaN:Si/GaN:C (DH:Si/C) 异质结构肖特基势垒二极管 (SBD)。由于梯度 AlGaN:Si 层中的额外 3-D 电子，DH:Si/C 的复合 2-D-3-D 通道具有更高的载流子浓度。通过 AlGaN:Si 插入层降低断态电场强度，较小的正移 ${C}$ —— ${V}$ 曲线是在关态应力下实现的。由于 AlGaN:Si 插入层的电荷屏蔽效应，GaN:C 缓冲层在 OFF 状态应力下的俘获/解俘效应被很好地抑制。与 SH:C 异质结构相比，DH:Si/C 异质结构在 OFF 状态应力下的陷阱密度响应显着降低。同时，上部通道的陷阱密度响应不受关态电应力时间的影响。此外，所提出的 SBD 在反向偏置应力下显示出较低的导通电阻，在反向应力下显示出更好的动态性能。