We have theoretically shown thermophotovoltaic (TPV) energy conversion with Ga_0.84In_0.16As_0.14Sb_0.86/InAs_0.91Sb_0.09 tandem cell, for which both subcells have the same lattice matched to GaSb substrate and can be experimentally fabricated in a high quality. Under the illumination of blackbody-like thermal spectra, the doping profiles of this device should be controlled as ${N}_{d{(}{a}{)}} = {12}$ (6) $\times 10^{{17}}$ cm⁻³ for top subcell while 10¹⁸⁽¹⁷⁾ cm⁻³ for bottom one, and energy conversion efficiency superior to 13% is expectable for radiator temperature ranging from 1700 to 2000 K, showing the enhancement in both efficiency and power density output when comparing with those for Ga_0.84In_0.16As_0.14Sb_0.86 single-junction cell. We have thus demonstrated a new type of experimentally available dual-junction cell to boost the thermal radiation conversion of TPV system.

中文翻译：

---

Ga0.84In0.16As0.14Sb0.86/InAs0.91Sb0.09 热光伏能量转换双结器件

我们在理论上展示了 Ga _0.84 In _0.16 As _0.14 Sb _0.86 /InAs _0.91 Sb _0.09串联电池的热光伏 (TPV) 能量转换，对于这两个子电池具有与 GaSb 衬底匹配的相同晶格，并且可以通过实验制造高质量。在类黑体热谱的照射下，该器件的掺杂分布应控制为 ${N}_{d{(}{a}{)}} = {12}$ (6) $\times 10^{{17}}$ cm ^-3为顶部子电池，而 10 ¹⁸⁽¹⁷⁾ cm ^-3为底部子电池，并且在散热器温度范围为 1700 至 2000 K 时，能量转换效率可预期超过 13%，显示出效率和功率密度输出的增强与 Ga _0.84 In _0.16 As _0.14 Sb _0.86单结电池的比较。因此，我们展示了一种新型的实验可用双结电池，以提高 TPV 系统的热辐射转换。