p-Diamond field-effect transistors (FETs) featuring large effective mass, long momentum relaxation time, and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond plasmonic THz FETs (TeraFETs) could operate in plasmonic resonant mode at a low-frequency window of 200 to ~600 GHz, thus showing promising potential for beyond 5G sub-THz applications. In this work, we explore the advantages of p-diamond transistors over n-diamond, Si, GaN, and InGaAs TeraFETs and estimate the minimum mobility required for the resonant plasmons. Our numerical simulation shows that the p-diamond TeraFET has a relatively low minimum resonant mobility, and thus could enable resonant detection. The diamond response characteristics can be adjusted by changing operating temperature. A decrease of temperature from 300 to 77 K improves the detection performance of TeraFETs. At both room temperature and 77 K, the p-diamond TeraFET presents a high detection sensitivity in a large dynamic range. When the channel length is reduced to 20 nm, the p-diamond TeraFET exhibits the highest dc response among all types of TeraFETs in a large frequency window.

中文翻译：

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p-Diamond、Si、GaN 和 InGaAs TeraFET

p-金刚石场效应晶体管 (FET) 具有大有效质量、长动量弛豫时间和高载流子迁移率，是等离子体太赫兹 (THz) 应用的极好候选者。先前的研究表明，p 金刚石等离子体太赫兹 FET (TeraFET) 可以在 200 至 ~600 GHz 的低频窗口以等离子体共振模式运行，从而显示出超越 5G 亚太赫兹应用的潜力。在这项工作中，我们探索了 p 金刚石晶体管相对于 n 金刚石、Si、GaN 和 InGaAs TeraFET 的优势，并估计了谐振等离子体所需的最小迁移率。我们的数值模拟表明 p 金刚石 TeraFET 具有相对较低的最小谐振迁移率，因此可以实现谐振检测。金刚石响应特性可以通过改变操作温度来调整。温度从 300 K 降低到 77 K 可提高 TeraFET 的检测性能。在室温和 77 K 条件下，p 金刚石 TeraFET 在大动态范围内都具有高检测灵敏度。当沟道长度减少到 20 nm 时，p 金刚石 TeraFET 在大频率窗口中表现出所有类型 TeraFET 中最高的直流响应。