In this study, the design of the class-E _M­ power amplifier is presented. In this design, the effects of on-state resistance and non-linear parasitic capacitances of the transistors are investigated. Two metal oxide semiconductor field-effect transistors (MOSFETs) of IRFZ24N and IRF510 with different drain-source resistances are used in the presented circuits. In the given design, the values of the operational frequency and duty ratio are 3.5 MHz and 0.5, respectively. This study shows the importance of considering non-linear parasitic elements of MOSFET, especially drain-source resistance in the designing of the class-E _M power amplifiers. It is shown that the class-E _M power amplifier with high MOSFET drain-source resistance needs high DC input voltage for both the primary and auxiliary circuits. In the previous works, non-linear on-state resistance and non-linear drain-source and gate-drain capacitances have not been included at the same time in the analyses. Two class-E _M amplifiers contain IRF510 and IRFZ24N are designed, simulated, and measured. The efficiency equal to 96.6% with 11.851 W output power at 3.5 MHz and the efficiency equal to 88.4% with 12.361 W output power are achieved for presented class-E _M amplifiers contain IRFZ24N and IRF510, respectively.

中文翻译：

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考虑寄生非线性电容和导通电阻的E类_M放大器设计

在这项研究中，提出了E类_M功率放大器的设计 。在这种设计中，研究了晶体管的导通状态电阻和非线性寄生电容的影响。在所示的电路中使用了两个具有不同漏源电阻的IRFZ24N和IRF510的金属氧化物半导体场效应晶体管（MOSFET）。在给定的设计中，工作频率和占空比的值分别为3.5 MHz和0.5。这项研究表明，在设计E _{M M}类功率放大器时，考虑MOSFET的非线性寄生元件，尤其是漏极-源极电阻的重要性 。结果表明，E类 _中号具有高MOSFET漏源电阻的功率放大器在主电路和辅助电路中都需要高的DC输入电压。在先前的工作中，非线性导通状态电阻以及非线性漏极-源极和栅极-漏极电容未同时包含在分析中。设计，仿真和测量了两个包含IRF510和IRFZ24N的E类 _M放大器。对于分别包含IRFZ24N和IRF510的现有E类_M放大器，在3.5 MHz的输出功率为11.851 W时，效率等于96.6％，在12.361 W的输出功率下效率为88.4％ 。