A predictive algorithm for accurately determining the crosstalk peaks caused by SiC MOSFETs is proposed in this article, which is very important to better design the drive and protect circuits of SiC MOSFETs. Compared to the conventional algorithm of crosstalk peaks, the nonlinearity of gate-drain capacitance (Cgd) is first considered in the proposed algorithm. In detail, the differential expression of the crosstalk peaks is deduced, in which, the main factors affecting crosstalk peaks are all included. Following, the execution flow of the predictive algorithm is provided according to the differential expression. To verify the accuracy of the proposed algorithm with considering the nonlinearity of Cgd, the simulation and experiment platforms are established and verified by using Kelvin packaged SiC MOSFET IMZ120R045M1 (1200 V/52 A). The calculation results of the proposed algorithm are compared with the conventional algorithm without considering the nonlinearity of Cgd under different working conditions of SiC MOSFET. Finally, the calculation results, the simulation, and experiment results show that the proposed algorithm is effective and has better accuracy. Therefore, the predictive algorithm proposed in this article provides a theoretical reference to better design the drive and protect circuits of SiC MOSFETs.

中文翻译：

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考虑栅漏电容非线性的SiC MOSFET串扰峰值预测算法

本文提出了一种准确确定SiC MOSFET引起的串扰峰值的预测算法，这对于更好地设计SiC MOSFET的驱动和保护电路非常重要。与传统的串扰峰值算法相比，该算法首先考虑了栅漏电容（Cgd）的非线性。详细推导了串扰峰值的微分表达式，其中包括了影响串扰峰值的主要因素。下面根据差分表达式给出预测算法的执行流程。为了验证所提算法在考虑 Cgd 非线性的情况下的准确性，建立仿真和实验平台并使用开尔文封装的 SiC MOSFET IMZ120R045M1 (1200 V/52 A) 进行验证。在不考虑SiC MOSFET不同工作条件下Cgd非线性的情况下，将所提算法的计算结果与常规算法进行了比较。最后，计算结果、仿真和实验结果表明，该算法是有效的，具有较好的精度。因此，本文提出的预测算法为更好地设计SiC MOSFET的驱动和保护电路提供了理论参考。