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A Dynamic Resonant Period Control Technique for Fast and Zero Voltage Switching in GaN-Based Active Clamp Flyback Converters
IEEE Transactions on Power Electronics ( IF 6.6 ) Pub Date : 2021-03-01 , DOI: 10.1109/tpel.2020.3016324
Chun-Chieh Kuo , Jia-Jyun Lee , Yu-Hsien He , Jiang-Yue Wu , Ke-Horng Chen , Ying-Hsi Lin , Shian-Ru Lin , Tsung-Yen Tsai

Compared to Si FETs, when the main GaN FET is in full zero voltage switching condition, maximum switching loss reduction can be achieved. Therefore, in this article, an active clamp flyback converter with GaN devices that implements fast ZVS by using the proposed dynamic resonant period control (DRPC) technique can reduce large transformer leakage inductance energy loss on the active resonant circuit. As the loading changes, the DRPC technique can dynamically adjust the on-time in auxiliary switch to prevent large voltage stress on the components in the primary side. In full load condition, the leakage energy loss can be reduced, thereby transferring more energy to the secondary side with maximum efficiency up to 94%.

中文翻译:

GaN基有源钳位反激式转换器中快速零电压开关的动态谐振周期控制技术

与 Si FET 相比,当主 GaN FET 处于完全零电压开关状态时,可以实现最大的开关损耗降低。因此,在本文中,通过使用所提出的动态谐振周期控制 (DRPC) 技术实现快速 ZVS 的具有 GaN 器件的有源钳位反激式转换器可以减少有源谐振电路上的大变压器漏电感能量损失。随着负载的变化,DRPC 技术可以动态调整辅助开关的导通时间,以防止初级侧元件承受过大的电压应力。在满载情况下,可以减少泄漏能量损失,从而将更多能量转移到次级侧,最高效率高达 94%。
更新日期:2021-03-01
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