The active-neutral-point-clamped (ANPC) converter is a prominent topology for medium voltage applications. To realize a high-power-density three-level ANPC converter, silicon carbide (SiC) MOSFETs may be used but they also lead to an extremely high cost. Thus, it is important to properly utilize the SiC switches in order to achieve not only a highly efficient but also a low-cost system. In this article, a three-level enhanced hybrid ANPC (E-HANPC) structure is proposed, which optimally utilizes both Si insulated gate bipolar transistors (IGBTs) and SiC MOSFETs to achieve these objectives. A dedicated modulation scheme is also proposed that enables a reduction in the conduction and switching losses and, hence, higher efficiency is achieved. The presented method optimally distributes the losses amongst the converter switches that leads to enhanced power handling capability of the E-HANPC converter. Moreover, the proposed converter also achieves short-length commutation loops for the high-frequency SiC MOSFETs, which imparts fast-switching capability with reduced overvoltage stress on these switches. To validate the efficacy of the proposed converter and modulation scheme, extensive simulation and analytical studies are performed. A prototype of the single-phase leg of the E-HANPC converter is also developed to validate its feasibility, proposed principles, and reconfirm the simulation and analytical findings.

中文翻译：

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具有基于优化损耗分布的调制方案的增强型混合有源中性点钳位转换器


有源中性点钳位 (ANPC) 转换器是中压应用的一种重要拓扑。为了实现高功率密度三电平ANPC转换器，可以使用碳化硅（SiC）MOSFET，但它们也导致成本极高。因此，正确利用 SiC 开关对于实现高效且低成本的系统非常重要。本文提出了一种三级增强型混合 ANPC (E-HANPC) 结构，该结构最佳地利用 Si 绝缘栅双极晶体管 (IGBT) 和 SiC MOSFET 来实现这些目标。还提出了一种专用调制方案，可以减少传导和开关损耗，从而实现更高的效率。所提出的方法在转换器开关之间优化分配损耗，从而增强 E-HANPC 转换器的功率处理能力。此外，所提出的转换器还实现了高频 SiC MOSFET 的短长度换向回路，从而提供了快速开关能力，同时减少了这些开关上的过压应力。为了验证所提出的转换器和调制方案的功效，进行了广泛的模拟和分析研究。还开发了 E-HANPC 转换器的单相支路原型，以验证其可行性、提出的原理，并重新确认仿真和分析结果。