This article presents a millimeter-scale CMOS 64 $\times $ ,64 single charged particle radiation detector system for external beam cancer radiotherapy. A 1 $\times $ ,1 $\mathbf {\mu m^{2}}$ diode measures energy deposition by a single charged particle in the depletion region, and the array design provides a large detection area of 512 $\times $ ,512 $\mathbf {\mu m^{2}}$ . Instead of sensing the voltage drop caused by radiation, the proposed system measures the pulsewidth, i.e., the time it takes for the voltage to return to its baseline. This obviates the need for using power-hungry and large analog-to-digital converters. A prototype application-specific integrated circuit (ASIC) is fabricated in TSMC 65-nm LP CMOS process and consumes the average static power of 0.535 mW under 1.2-V analog and digital power supply. The functionality of the whole system is successfully verified in a clinical 67.5-MeV proton beam setting. To our knowledge, this is the first work to demonstrate single charged particle detection for implantable in vivo dosimetry.

中文翻译：

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用于癌症放射治疗的毫米级单带电粒子剂量计

本文介绍了毫米级 CMOS 64 $\times $ ,64 用于外束癌症放射治疗的单带电粒子辐射探测器系统。1 $\times $ ,1 $\mathbf {\mu m^{2}}$ 二极管测量耗尽区单个带电粒子的能量沉积，阵列设计提供512 $\times $ ,512 $\mathbf {\mu m^{2}}$ . 所提出的系统不是检测由辐射引起的电压降，而是测量脉冲宽度，即电压返回其基线所需的时间。这避免了使用耗电大的模数转换器的需要。原型专用集成电路 (ASIC) 采用 TSMC 65-nm LP CMOS 工艺制造，在 1.2-V 模拟和数字电源下的平均静态功耗为 0.535 mW。整个系统的功能在临床 67.5-MeV 质子束设置中得到成功验证。据我们所知，这是第一项证明可植入单带电粒子检测的工作。体内 剂量测定。