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Optimal preparation of high-entropy boride-silicon carbide ceramics
Journal of Advanced Ceramics ( IF 18.6 ) Pub Date : 2020-10-21 , DOI: 10.1007/s40145-020-0418-1
Yan Zhang , Shi-Kuan Sun , Wei-Ming Guo , Liang Xu , Wei Zhang , Hua-Tay Lin

High-entropy boride-silicon carbide (HEB-SiC) ceramics were fabricated using boride-based powders prepared from borothermal and boro/carbothermal reduction methods. The effects of processing routes (borothermal reduction and boro/carbothermal reduction) on the HEB powders were examined. HEB-SiC ceramics with > 98% theoretical density were prepared by spark plasma sintering at 2000 °C. It was demonstrated that the addition of SiC led to slight coarsening of the microstructure. The HEB-SiC ceramics prepared from boro/carbothermal reduction powders showed a fine-grained microstructure and higher Vickers’ hardness but lower fracture toughness value as compared with the same composition prepared from borothermal reduction powders. These results indicated that the selection of the powder processing method and the addition of SiC phase could contribute to the optimal preparation of high-entropy boride-based ceramics.



中文翻译:

高熵硼化物-碳化硅陶瓷的优化制备

使用从硼热还原法和硼/碳热还原法制备的硼化物基粉末制造高熵硼化物-碳化硅(HEB-SiC)陶瓷。检查了加工路线(硼热还原和硼/碳热还原)对HEB粉末的影响。通过在2000°C下进行火花等离子体烧结制备了理论密度> 98%的HEB-SiC陶瓷。已经证明,SiC的加入导致微观结构的轻微粗化。由硼/碳热还原粉末制备的HEB-SiC陶瓷与由硼热还原粉末制备的相同组合物相比,显示出细微的微观结构和较高的维氏硬度,但断裂韧性值较低。

更新日期:2020-10-26
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