All-inorganic halide perovskites CsPbX₃ (X = Cl, Br or I) have transpired to be utilized in several optoelectronic devices owing to their multifaceted optical and electrical features and superior thermal stability as compared to other organic–inorganic hybrid perovskites. Herein, a bipolar resistive switching (RS) characteristic of the CsPbX₃ cube in Al/CsPbCl_xBr_3–x (x = 3, 1.5, 0)/ITO/PET configuration is reported with a low operating voltage. Among all the fabricated memory devices, the CsPbBr₃-based system presents the most pronounced RS characteristics such as no initial forming process, reproducibility, uniform switching, and long retention time with a high on/off ratio. By a subtle control over current compliance and stopping voltage, the multilevel data storage capabilities are also observed in flexible memory devices. Owing to the increasing demand of flexible electronics, current–voltage characteristics are further carried out under different bending diameters to access the mechanical stability and electrical reliability of the perovskite-based memory device. No discernible difference is observed in the low-resistance state and high-resistance state current under flat and bending conditions. Additionally, as fabricated devices show an enhanced RS effect where the resistance can be controlled both by electrical field and light illumination, this study also explores the data encoding process by using certain light irradiance during the SET process. The registered RS behavior is elucidated with a model of the creation and annihilation of a conductive multifilament that originated from the migration of halide ions and their corresponding vacancies in halide perovskite layers. This study will pave the way for the utilization of inorganic-halide perovskites with different nanoforms in low-power consumption nonvolatile memory of future wearable electronic gadgets.

中文翻译：

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卤化物可调全无机钙钛矿立方体中的多层编程和光辅助电阻切换，用于柔性存储设备

与其他有机-无机杂化钙钛矿相比，全无机卤化物钙钛矿CsPbX ₃（X = Cl，Br或I）由于具有多方面的光学和电学特性以及出色的热稳定性，已被用于多种光电器件中。在此，据报道在低工作电压下，Al / CsPbCl _x Br _{3– x}（x = 3，1.5，0 ）/ ITO / PET配置中的CsPbX ₃立方体的双极电阻切换（RS）特性。在所有制造的存储设备中，CsPbBr ₃基于系统的系统具有最明显的RS特性，例如没有初始成型过程，可重复性，均匀切换以及具有高开/关比的长保留时间。通过对电流顺从性和停止电压的微妙控制，在灵活的存储设备中还可以观察到多级数据存储功能。由于对柔性电子器件的需求不断增长，在不同的弯曲直径下进一步实现了电流-电压特性，以获取基于钙钛矿的存储设备的机械稳定性和电可靠性。在平坦和弯曲条件下，在低电阻状态电流和高电阻状态电流中未观察到明显差异。另外，由于制造的器件显示出增强的RS效应，其中可以通过电场和光照射来控制电阻，因此本研究还探索了在SET过程中使用一定的光照度进行数据编码的过程。通过导电性复丝的创建和model灭模型阐明了注册的RS行为，该模型是由卤化物钙钛矿层中卤离子的迁移及其相应的空位引起的。这项研究将为在未来可穿戴电子产品的低功耗非易失性存储器中利用具有不同纳米形式的无机卤化物钙钛矿铺平道路。通过导电性复丝的创建和model灭模型阐明了注册的RS行为，该模型是由卤化物钙钛矿层中卤离子的迁移及其相应的空位引起的。这项研究将为在未来可穿戴电子产品的低功耗非易失性存储器中利用具有不同纳米形式的无机卤化物钙钛矿铺平道路。通过导电性复丝的创建和model灭模型阐明了注册的RS行为，该模型是由卤化物钙钛矿层中卤离子的迁移及其相应的空位引起的。这项研究将为在未来可穿戴电子产品的低功耗非易失性存储器中利用具有不同纳米形式的无机卤化物钙钛矿铺平道路。