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Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaO x in Pt/Ta2O5/Ti Device Stacks
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-23 , DOI: 10.1002/pssa.202000534 Soeun Jin 1 , Donguk Lee 2 , Myonghoon Kwak 2 , Ah Ra Kim 3 , Hyunsang Hwang 2 , Hyuknyeong Cheon 4 , Jung-Dae Kwon 3 , Yonghun Kim 3
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-23 , DOI: 10.1002/pssa.202000534 Soeun Jin 1 , Donguk Lee 2 , Myonghoon Kwak 2 , Ah Ra Kim 3 , Hyunsang Hwang 2 , Hyuknyeong Cheon 4 , Jung-Dae Kwon 3 , Yonghun Kim 3
Affiliation
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Herein, a Ta2O5‐based resistive synaptic device with high symmetricity and enhanced switching ratio is successfully obtained by the formation of sub‐TaO
x
with enriched oxygen vacancies into Ta2O5 switching layers. The concentration of Ta nanoclusters in Ta2O5 can be precisely controlled using plasma‐enhanced atomic layer deposition (PE‐ALD), where the number of cycles is varied from 5 to 20 cycles with steps of five cycles. The as‐fabricated Ta2O5 resistive synaptic device containing Ta deposited using five cycles exhibits increased switching window and switching current. As a result, the linearity of potentiation/depression improves significantly from 13.53/−16.83 to 4.45/−1.38 by applying successive programing pulses, indicating that the recognition accuracy of the Mixed National Institute of Standards and Technology pattern is increased by 11.45% compared with the pristine device. It is considered that the introduction of an optimal number of Ta deposition cycles can effectively control the porosity of the Ta2O5 layer, resulting in an increase in the movement of oxygen ions and analog switching behavior. Thus, a facile PE‐ALD technique can be applied to demonstrate highly reliable analog synaptic devices for neuromorphic hardware systems.
中文翻译：
通过在Pt / Ta2O5 / Ti器件堆栈中嵌入富氧空位Sub-TaO x来改善模拟电阻特性的突触调制的简便方法
在此，通过将富含氧空位的亚TaO x形成到Ta 2 O 5开关层中，成功获得了具有高对称性和更高开关比的基于Ta 2 O 5的电阻性突触装置。可以使用等离子增强原子层沉积（PE-ALD）精确控制Ta 2 O 5中Ta纳米团簇的浓度，其中循环数从5到20个循环不等，每5个循环为一个循环。组装好的Ta 2 O 5 使用五个周期沉积的包含Ta的电阻性突触设备显示出增加的开关窗口和开关电流。结果，通过施加连续的编程脉冲，增强/抑制的线性度从13.53 / −16.83显着提高到4.45 / −1.38，表明与美国国家标准技术研究院混合模式的识别准确度比2007年提高了11.45％。原始设备。认为引入最佳数量的Ta沉积循环可以有效地控制Ta 2 O 5的孔隙率层，导致氧离子运动和模拟开关行为增加。因此，可以将一种简便的PE-ALD技术应用于神经形态硬件系统的高度可靠的模拟突触设备。
更新日期：2020-10-23
中文翻译：
通过在Pt / Ta2O5 / Ti器件堆栈中嵌入富氧空位Sub-TaO x来改善模拟电阻特性的突触调制的简便方法
在此，通过将富含氧空位的亚TaO x形成到Ta 2 O 5开关层中，成功获得了具有高对称性和更高开关比的基于Ta 2 O 5的电阻性突触装置。可以使用等离子增强原子层沉积（PE-ALD）精确控制Ta 2 O 5中Ta纳米团簇的浓度，其中循环数从5到20个循环不等，每5个循环为一个循环。组装好的Ta 2 O 5 使用五个周期沉积的包含Ta的电阻性突触设备显示出增加的开关窗口和开关电流。结果，通过施加连续的编程脉冲，增强/抑制的线性度从13.53 / −16.83显着提高到4.45 / −1.38，表明与美国国家标准技术研究院混合模式的识别准确度比2007年提高了11.45％。原始设备。认为引入最佳数量的Ta沉积循环可以有效地控制Ta 2 O 5的孔隙率层，导致氧离子运动和模拟开关行为增加。因此，可以将一种简便的PE-ALD技术应用于神经形态硬件系统的高度可靠的模拟突触设备。
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