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Single-Crystal-like Textured Growth of CoFe2O4 Thin Film on an Amorphous Substrate: A Self-Bilayer Approach
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-10-21 , DOI: 10.1021/acsaelm.0c00716 Sagar E. Shirsath 1 , Danyang Wang 1 , Ji Zhang 1 , Akimitsu Morisako 2 , Sean Li 1 , Xiaoxi Liu 2
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-10-21 , DOI: 10.1021/acsaelm.0c00716 Sagar E. Shirsath 1 , Danyang Wang 1 , Ji Zhang 1 , Akimitsu Morisako 2 , Sean Li 1 , Xiaoxi Liu 2
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Single crystal or textured growth with preferred orientation of transition-metal oxide thin films is highly desirable for their application in technological devices. Commercially available single-crystal substrates are the obvious base to deposit thin films with a desired orientation. However, these substrates have inherent shortcomings including limited number of crystal structures, lattice parameters and orientations, and most importantly their high costs. Herein, a universal approach was developed to grow an oxide thin film with (100) crystal orientation on an amorphous substrate. To achieve this goal, two layers of the same material called self-bilayer were deposited at different temperatures and of different thicknesses. CoFe2O4 spinel ferrite was used as a model system to realize the approach since it is difficult to grow spinel ferrites with (100) orientation even on single-crystal substrates. X-ray diffraction pattern and transmission electron microscopy confirmed the single-crystal-like growth of CoFe2O4 with (100) orientation on an amorphous SiO2/Si substrate. The deposited CoFe2O4 bilayer thin film displays unprecedentedly giant perpendicular magnetic anisotropy with a coercivity of 14.1 kOe, saturation magnetization of 475 emu/cm3, and remanent ratio of 0.92 at room temperature. This work opens up a facile and generic route to grow complex metal oxide systems with preferred orientation on an amorphous substrate via an innovative self-bilayer approach.
中文翻译：
CoFe 2 O 4薄膜在非晶衬底上的单晶状织构生长：自双层方法
对于过渡金属氧化物薄膜具有优选取向的单晶或织构生长，对于它们在技术设备中的应用是非常期望的。商业上可获得的单晶衬底是沉积具有所需取向的薄膜的明显基础。然而，这些基板具有固有的缺点，包括有限数量的晶体结构，晶格参数和取向，最重要的是它们的高成本。本文中，开发了一种通用方法以在非晶衬底上生长具有（100）晶体取向的氧化物薄膜。为了实现这个目标，在不同的温度和不同的厚度下沉积了两层相同材料的自双层膜。钴铁2 O 4尖晶石铁氧体被用作实现该方法的模型系统，因为即使在单晶衬底上也很难生长（100）取向的尖晶石铁氧体。X射线衍射图和透射电子显微镜证实了在无定形SiO 2 / Si衬底上CoFe 2 O 4具有（100）取向的单晶状生长。沉积的CoFe 2 O 4双层薄膜显示出前所未有的巨大垂直磁各向异性，矫顽力为14.1 kOe，饱和磁化强度为475 emu / cm 3。，室温下的残留比为0.92。这项工作为通过创新的自双层方法在无定形基材上以优选的取向生长复杂的金属氧化物体系开辟了一条简便而通用的途径。
更新日期：2020-11-25
中文翻译：
CoFe 2 O 4薄膜在非晶衬底上的单晶状织构生长：自双层方法
对于过渡金属氧化物薄膜具有优选取向的单晶或织构生长，对于它们在技术设备中的应用是非常期望的。商业上可获得的单晶衬底是沉积具有所需取向的薄膜的明显基础。然而，这些基板具有固有的缺点，包括有限数量的晶体结构，晶格参数和取向，最重要的是它们的高成本。本文中，开发了一种通用方法以在非晶衬底上生长具有（100）晶体取向的氧化物薄膜。为了实现这个目标，在不同的温度和不同的厚度下沉积了两层相同材料的自双层膜。钴铁2 O 4尖晶石铁氧体被用作实现该方法的模型系统，因为即使在单晶衬底上也很难生长（100）取向的尖晶石铁氧体。X射线衍射图和透射电子显微镜证实了在无定形SiO 2 / Si衬底上CoFe 2 O 4具有（100）取向的单晶状生长。沉积的CoFe 2 O 4双层薄膜显示出前所未有的巨大垂直磁各向异性，矫顽力为14.1 kOe，饱和磁化强度为475 emu / cm 3。，室温下的残留比为0.92。这项工作为通过创新的自双层方法在无定形基材上以优选的取向生长复杂的金属氧化物体系开辟了一条简便而通用的途径。
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