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Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-10-20 , DOI: 10.1002/pssb.202000429 Al-Amin Ahmed Simon 1 , Lyle Jones 1 , Yoshifumi Sakaguchi 2 , Henri Kunold 3 , Isabella van Rooyen 4 , Maria Mitkova 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-10-20 , DOI: 10.1002/pssb.202000429 Al-Amin Ahmed Simon 1 , Lyle Jones 1 , Yoshifumi Sakaguchi 2 , Henri Kunold 3 , Isabella van Rooyen 4 , Maria Mitkova 1
Affiliation
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Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass-forming region is a potential candidate for high-temperature and high-radiation phase change applications. Herein, the concept of employing Ge
x
Se100−x
glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈1014 cm−2) on the Ge
x
Se100−x
(x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X-ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic-GeSe2 crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge40Se60 is also shown as an example.
中文翻译：
离子辐照对非晶态和晶态Ge-Se的影响及其作为相变温度传感器的应用
相变材料的研究主要集中在它们作为存储器件或需要低相变温度的温度控制的应用上。Ge-Se二元硫属化物玻璃体系具有宽广的玻璃形成区域，是高温和高辐射相变应用的潜在候选者。在此，报道了使用 Ge x Se 100− x玻璃利用相变效应监测高温 (450–528 °C)的概念。分析了原型传感器的材料选择、器件结构和性能。此外，能量为 200、600 和 1000 keV（能量密度 ≈10 14 cm -2）的 Xe 离子对重离子照射对 Ge x Se 的影响 研究了 100− x ( x = 30, 33, 40) 薄膜和相变器件。通过拉曼光谱和 X 射线衍射 (XRD) 评估辐照对薄膜的非晶和晶体结构的影响。尽管非晶膜结构单元的变化可以忽略不计，但在晶体膜中发现正交-GeSe 2晶体受辐照和新相的影响最大，在辐照后的薄膜中发现正交GeSe 2晶体。还以具有 Ge 40 Se 60活性膜的传感器的性能为例。
更新日期：2020-10-20
中文翻译：
离子辐照对非晶态和晶态Ge-Se的影响及其作为相变温度传感器的应用
相变材料的研究主要集中在它们作为存储器件或需要低相变温度的温度控制的应用上。Ge-Se二元硫属化物玻璃体系具有宽广的玻璃形成区域，是高温和高辐射相变应用的潜在候选者。在此，报道了使用 Ge x Se 100− x玻璃利用相变效应监测高温 (450–528 °C)的概念。分析了原型传感器的材料选择、器件结构和性能。此外，能量为 200、600 和 1000 keV（能量密度 ≈10 14 cm -2）的 Xe 离子对重离子照射对 Ge x Se 的影响 研究了 100− x ( x = 30, 33, 40) 薄膜和相变器件。通过拉曼光谱和 X 射线衍射 (XRD) 评估辐照对薄膜的非晶和晶体结构的影响。尽管非晶膜结构单元的变化可以忽略不计，但在晶体膜中发现正交-GeSe 2晶体受辐照和新相的影响最大，在辐照后的薄膜中发现正交GeSe 2晶体。还以具有 Ge 40 Se 60活性膜的传感器的性能为例。
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