For the production of nitride‐based optical and power devices, it is known that metal organics chemical vapor deposition (MOCVD) is an industrial method which is used worldwide. However, MOCVD has disadvantages: 1) a lot of ammonia gas is consumed; 2) the sublimation of GaN is not negligible at growth temperature and these increase the production cost; 3) the growth of in‐containing nitrides is difficult because the growth temperature is too high; and 4) using large Si substrates of 150–300 mm diameter for industrial production, wafer breakage and bowing occur. It is therefore important to develop novel epitaxial growth methods that can replace the MOCVD method. Recently, high‐density radical source (HDRS) is developed by combining inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) which can be applied to molecular beam epitaxy (MBE) in order to increase the growth rate of nitrides. Another novel method, the radical enhanced MOCVD (REMOCVD) method with using very high frequency (VHF) plasma, has also been developed. This REMOCVD allows the low growth temperature without using any ammonia gas. These novel methods are promising for replacing the MOCVD method from the viewpoint of production cost without ammonia gas usage.

中文翻译：

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使用等离子体技术的氮化物半导体的新型外延

对于生产基于氮化物的光学和功率器件，众所周知，金属有机物化学气相沉积（MOCVD）是一种在世界范围内使用的工业方法。但是，MOCVD有以下缺点：1）消耗了大量的氨气；2）在生长温度下GaN的升华不能忽略不计，这会增加生产成本；3）含氮化物的生长很困难，因为生长温度太高；4）使用直径为150-300 mm的大型硅衬底进行工业生产，会发生晶片破裂和弯曲。因此，重要的是开发可以替代MOCVD方法的新型外延生长方法。最近，通过结合感应耦合等离子体（ICP）和电容耦合等离子体（CCP）来开发高密度自由基源（HDRS），可以将其应用于分子束外延（MBE），以提高氮化物的生长速率。还开发了另一种新方法，即使用甚高频（VHF）等离子体的自由基增强MOCVD（REMOCVD）方法。该REMOCVD无需使用任何氨气即可实现低生长温度。从不使用氨气的生产成本的观点来看，这些新颖的方法有望替代MOCVD方法。