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A Curved Graphene Nanoribbon with Multi-Edge Structure and High Intrinsic Charge Carrier Mobility
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2020-10-20 , DOI: 10.1021/jacs.0c07013
Wenhui Niu 1, 2 , Ji Ma 2 , Paniz Soltani 3 , Wenhao Zheng 3 , Fupin Liu 4 , Alexey A. Popov 4 , Jan J. Weigand 5 , Hartmut Komber 6 , Emanuele Poliani 7 , Cinzia Casiraghi 7 , Jörn Droste 8 , Michael Ryan Hansen 8 , Silvio Osella 9 , David Beljonne 10 , Mischa Bonn 3 , Hai I. Wang 3 , Xinliang Feng 2 , Junzhi Liu 2, 11 , Yiyong Mai 1
Affiliation  

Structurally well-defined graphene nanoribbons (GNRs) have emerged as highly promising materials for the next-generation nanoelectronics. The electronic properties of GNRs critically depend on their edge topologies. Here, we demonstrate the efficient synthesis of a curved GNR (cGNR) with a combined cove, zigzag, and armchair edge structure, through bottom-up synthesis. The curvature of the cGNR is elucidated by the corresponding model compounds tetrabenzo[a,cd,j,lm]perylene (1) and diphenanthrene-fused tetrabenzo[a,cd,j,lm]perylene (2), the structures of which are unambiguously confirmed by the X-ray single-crystal analysis. The resultant multi-edged cGNR exhibits a well-resolved absorption at the near-infrared (NIR) region with a maximum peak at 850 nm, corresponding to a narrow optical energy gap of ∼1.22 eV. Employing THz spectroscopy, we disclose a long scattering time of ∼60 fs, corresponding to a record intrinsic charge carrier mobility of ∼600 cm2 V-1 s-1 for photogenerated charge carriers in cGNR.

中文翻译:

具有多边缘结构和高内在载流子迁移率的弯曲石墨烯纳米带

结构明确的石墨烯纳米带(GNRs)已成为下一代纳米电子学非常有前途的材料。GNR 的电子特性严重依赖于它们的边缘拓扑结构。在这里,我们通过自下而上的合成展示了具有组合的凹形、锯齿形和扶手椅边缘结构的弯曲 GNR (cGNR) 的有效合成。cGNR 的曲率由相应的模型化合物四苯并 [a,cd,j,lm] 苝 (1) 和二菲稠合的四苯并 [a,cd,j,lm] 苝 (2) 阐明,其结构为X 射线单晶分析明确证实。所得的多边 cGNR 在近红外 (NIR) 区域表现出良好的吸收,最大峰值在 850 nm,对应于 ~1.22 eV 的窄光能隙。采用太赫兹光谱,
更新日期:2020-10-20
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