This article presents the development of a cryogenic bandgap reference (BGR) circuit in a standard 0.18-μm CMOS process for high-purity germanium (HPGe) detectors for low-background physics experiments. It provides a temperature-independent reference for mixed-signal circuits such as a ramp generator. A reliable cryogenic model is essential for the circuit design. The parameters of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) were characterized and extracted at cryogenic temperatures from dc measurements on various geometries. MOSFETs had a general increase in threshold voltage and carrier mobility, a decrease in subthreshold slope at 77 K, with respect to 300 K. A new set of compact model parameters for MOSFETs and BJTs under cryogenic temperatures have been extracted. The relative errors between simulation and measurement were below 10% in almost all the bias regions for various device dimensions at 77 K. Two different BGR circuits were designed with the modified compact model parameters and evaluated from 77 K to 300 K. Temperature coefficient of less than 0.2 mV/K has been achieved over the whole range from 300 K to 77 K.

中文翻译：

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用于 HPGe 探测器的 MOSFET 和 BJT 紧凑模型参数提取的低温带隙参考电路


本文介绍了采用标准 0.18 μm CMOS 工艺开发的低温带隙基准 (BGR) 电路，用于低本底物理实验的高纯锗 (HPGe) 探测器。它为混合信号电路（例如斜坡发生器）提供与温度无关的参考。可靠的低温模型对于电路设计至关重要。金属氧化物半导体场效应晶体管 (MOSFET) 和双极结型晶体管 (BJT) 的参数在低温下通过各种几何形状的直流测量进行表征和提取。 MOSFET 的阈值电压和载流子迁移率普遍增加，亚阈值斜率在 77 K 时相对于 300 K 有所下降。已经提取了低温下 MOSFET 和 BJT 的一组新的紧凑模型参数。在 77 K 温度下，各种器件尺寸的几乎所有偏置区域中，仿真与测量之间的相对误差均低于 10%。使用修改后的紧凑模型参数设计了两种不同的 BGR 电路，并在 77 K 至 300 K 温度范围内进行了评估。温度系数小于在 300 K 至 77 K 的整个范围内实现了低于 0.2 mV/K。