A novel monolithic pixelated sensor and readout chip, the compact linear collider tracker detector (CLICTD) chip, is presented. The CLICTD chip was designed targeting the requirements of the silicon tracker development for the experiment at the compact linear collider (CLIC) and has been fabricated in a modified 180 nm CMOS imaging process with charge collection on a high-resistivity p-type epitaxial layer. The chip features a matrix of $16\times 128$ elongated channels, each measuring $300\times 30\,\,\mu \text {m}^{2}$ . Each channel contains 8 equidistant collection electrodes and analog readout circuits to ensure prompt signal formation. A simultaneous 8-bit time-of-arrival (with 10 ns time bins) and 5-bit time-over-threshold measurement is performed on the combined digital output of the 8 subpixels in every channel. The chip has been fabricated in two process variants and characterized in laboratory measurements using electrical test pulses and radiation sources. Results show a minimum threshold between 135 and 180 e⁻ and a noise of about 14 e⁻ rms. The design aspects and characterization results of the CLICTD chip are presented.

中文翻译：

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CLICTD 像素化单片传感器芯片的设计和表征

提出了一种新型单片像素化传感器和读出芯片，即紧凑型线性对撞机跟踪器检测器 (CLICTD) 芯片。CLICTD 芯片是针对紧凑型线性对撞机 (CLIC) 实验的硅跟踪器开发要求而设计的，并采用改进的 180 nm CMOS 成像工艺制造，在高电阻率 p 型外延层上收集电荷。该芯片具有一个矩阵 $16\乘以 128$ 细长的通道，每个测量 $300\times 30\,\,\mu \text {m}^{2}$ . 每个通道包含 8 个等距采集电极和模拟读出电路，以确保及时形成信号。对每个通道中 8 个子像素的组合数字输出执行同步 8 位到达时间（具有 10 ns 时间仓）和 5 位超过阈值时间测量。该芯片采用两种工艺变体制造，并在实验室测量中使用电测试脉冲和辐射源进行表征。结果显示最小阈值介于 135 和 180 e ^{- 之间}，噪声约为 14 e ^- rms。介绍了 CLICTD 芯片的设计方面和表征结果。