In article number 2002704, Henry Medina, Ming Yang, Shijie Wang, Dongzhi Chi, and co‐workers report a ReRAM cell with outstanding cumulative probabilities using a MoS₂/polymer heterostructure. Moreover, the high resistance state is determined to be an excellent source of multistate randomness. Thus, a process for the production of high‐performance ReRAM devices is presented, which sheds light on their application as random number generation.

中文翻译：

---

存储器设备：MoS2 /聚合物异质结构，可实现稳定的电阻切换和多态随机性（材料研究学报42/2020）

在文章2002704中，Henry Medina，Ming Yang，Wang Shijie Wang，Chi Dongzhi及其同事报告了一种使用MoS ₂ /聚合物异质结构的ReRAM单元，具有出色的累积概率。此外，高阻态被确定为多态随机性的极好来源。因此，提出了一种高性能ReRAM器件的生产过程，从而阐明了其作为随机数生成的应用。