Abstract In this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage characteristics was reduced with increase in ZnO annealing temperature. Correspondingly, the on/off ratio of the RS also gets reduced. The hysteresis behaviour was highly consistent and repeatable for the films annealed at 150 °C. The films annealed at 450 °C did not show any RS behaviour. Under the high current condition, a reproducible RS behaviour was observed. This was attributed to the synergetic effects of lowering of the barrier height at electrode/ZnO interface and the increase in the grain size with the annealing temperatures. The RS behaviour is ascribed to the conduction mechanism at the ITO/ZnO interface.

中文翻译：

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退火温度对溶液处理氧化锌薄膜电阻转换行为的影响

摘要 在这项研究中，研究了具有以下配置的制造器件的电阻开关 (RS) 行为：ITO/ZnO（x 退火温度）/Al。观察到电流-电压特性中的磁滞回线的面积随着ZnO退火温度的增加而减小。相应地，RS 的开/关比也会降低。对于在 150 °C 下退火的薄膜，滞后行为是高度一致和可重复的。在 450 °C 下退火的薄膜没有表现出任何 RS 行为。在高电流条件下，观察到可重现的 RS 行为。这归因于降低电极/ZnO 界面势垒高度和晶粒尺寸随退火温度增加的协同效应。