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Zn thin film on Al metal as thermal substrates for LED application: thermal and optical performance
Optical and Quantum Electronics ( IF 3.3 ) Pub Date : 2020-10-20 , DOI: 10.1007/s11082-020-02585-1
Subramani Shanmugan , Devarajan Mutharasu

Zn thin film at various thickness was deposited on Al substrates and used as thermal interface materials and tested their performance on affecting the thermal and optical properties of the LED at various driving currents. The total thermal resistance (Rth-tot) of the LED showed the influence of various thickness and annealing temperatures and observed low value for 300 nm and 400 nm at ~ 150 °C. High difference in Rth-tot (∆Rth-tot − 3.78 K/W) was recorded with 300 nm Zn thin film annealed at 150 °C compared with bare Al substrates measured at 700 mA. Higher annealing temperature does not show much improvement on reducing the Rth-tot of the LED. Among the all Zn film studied, 300 nm thickness and annealed at 150 °C showed better performance on reducing the rise in junction temperatures (TJ) and the observed difference in TJ value was 8.07 °C compared with that of bare Al substrate measured at 700 mA. The optical output of LED was also supported the observed results and achieved improved light output for the same boundary conditions. High value in lux values was observed for the LED with 300 nm thickness and annealed at 150 °C and 350 °C for all driving currents. The roughness of Zn thin film increased with thickness and annealing temperature increased upto 500 nm and 350 °C respectively. The highest and lowest surface roughness of 112 nm and 21 nm were recorded for 500 nm and 800 nm thick Zn from 150 °C annealed samples respectively and supported the observation made by both thermal and optical analysis of the given LED. Overall, we may consider Zn thin film as solid thin film interface material for LED packaging application.

中文翻译:

铝金属上的锌薄膜作为 LED 应用的热基板:热和光学性能

将不同厚度的 Zn 薄膜沉积在 Al 基板上并用作热界面材料,并测试它们在不同驱动电流下对 LED 的热和光学性能的影响。LED 的总热阻 (Rth-tot) 显示出各种厚度和退火温度的影响,并在 ~ 150 °C 下观察到 300 nm 和 400 nm 的低值。与在 700 mA 下测量的裸铝基板相比,在 150 °C 下退火的 300 nm Zn 薄膜记录了 Rth-tot (ΔRth-tot − 3.78 K/W) 的高差异。较高的退火温度对降低 LED 的 Rth-tot 没有太大改善。在研究的所有 Zn 薄膜中,300 nm 厚并在 150 °C 下退火在降低结温 (TJ) 上升方面表现出更好的性能,观察到的 TJ 值差异为 8。07 °C 与在 700 mA 下测量的裸铝基板相比。LED 的光输出也支持观察到的结果,并在相同的边界条件下实现了改进的光输出。观察到厚度为 300 nm 且在 150 °C 和 350 °C 下对所有驱动电流进行退火的 LED 的高勒克斯值。Zn 薄膜的粗糙度随着厚度和退火温度的增加而增加,分别达到 500 nm 和 350 °C。150 °C 退火样品中 500 nm 和 800 nm 厚的 Zn 分别记录了 112 nm 和 21 nm 的最高和最低表面粗糙度,并支持通过给定 LED 的热分析和光学分析进行的观察。总的来说,我们可以考虑将 Zn 薄膜作为 LED 封装应用的固体薄膜界面材料。LED 的光输出也支持观察到的结果,并在相同的边界条件下实现了改进的光输出。观察到厚度为 300 nm 且在 150 °C 和 350 °C 下对所有驱动电流进行退火的 LED 的高勒克斯值。Zn 薄膜的粗糙度随着厚度和退火温度的增加而增加,分别达到 500 nm 和 350 °C。150 °C 退火样品中 500 nm 和 800 nm 厚的 Zn 分别记录了 112 nm 和 21 nm 的最高和最低表面粗糙度,并支持通过给定 LED 的热分析和光学分析进行的观察。总的来说,我们可以考虑将 Zn 薄膜作为 LED 封装应用的固体薄膜界面材料。LED 的光输出也支持观察到的结果,并在相同的边界条件下实现了改进的光输出。观察到厚度为 300 nm 且在 150 °C 和 350 °C 下对所有驱动电流进行退火的 LED 的高勒克斯值。Zn 薄膜的粗糙度随着厚度和退火温度的增加而增加,分别达到 500 nm 和 350 °C。150 °C 退火样品中 500 nm 和 800 nm 厚的 Zn 分别记录了 112 nm 和 21 nm 的最高和最低表面粗糙度,并支持通过给定 LED 的热分析和光学分析进行的观察。总的来说,我们可以考虑将 Zn 薄膜作为 LED 封装应用的固体薄膜界面材料。
更新日期:2020-10-20
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