In this paper, we compare quantitatively the results obtained from the numerical simulation of current transport in polysilicon-channel MOSFETs under different modeling assumptions typically adopted to reproduce the basic physics of the devices, including the effective medium approximation and the description of polysilicon as the haphazard ensemble of monocrystalline silicon grains separated by highly defective grain boundaries. In the latter case, both pure drift-diffusion transport and a mix of intra-grain drift-diffusion and inter-grain thermionic emission are considered. Interest is focused on cylindrical nanowire and macaroni gate-all-around structures, due to their relevance in the field of 3-Dimensional NAND Flash memories, focusing not only on the average behavior but also on the variability in the electrical characteristics of the devices.

在本文中，我们定量比较了在通常用于重现器件基本物理特性的不同建模假设下，多晶硅沟道MOSFET电流传输数值模拟获得的结果，包括有效的介质近似和将多晶硅描述为偶然现象。由高度缺陷的晶界隔开的单晶硅晶粒的整体。在后一种情况下，既考虑了纯漂移扩散传输，又考虑了颗粒内漂移扩散与颗粒间热电子发射的混合。由于它们在3维NAND闪存领域中的相关性，因此人们将重点放在圆柱形纳米线和通心粉通栅的所有结构上，