In this paper, an Ultra-Wideband (UWB) low noise amplifier (LNA) with low power consumption and high-power gain in 180nm CMOS technology is presented. An innovative combination of conventional methods to design UWB-LNA, i.e., resistive-feedback, inductive-series peaking, noise cancelling and inductive degeneration techniques is described here. The proposed LNA consists of two common source amplifiers with resistive feedback in which the noise and power consumption have been reduced by using the noise cancelling and current reuse techniques, respectively. Also, resistive feedback in the first stage reduces input resistance, hereby improving input impedance matching. In the second stage, which is used to increase the power gain, a common source structure with inductive-series peaking and noise cancellation techniques is used. The analytical results agree well with the post layout simulation results. The post-layout simulation shows a gain of 19±1.5dB and noise figure (NF) of 2.3dB in the whole −3dB bandwidth of 0.1GHz to 6.1GHz, while the S11 and S22 are less than −11dB. The proposed circuit has a figure of merit of 9.9 which is significantly improved compared to the previous works. The total power dissipation is only 7.3mW, and the active area is less than 0.7mm².

中文翻译：

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采用 180 nm CMOS 技术的超宽带 0.1–6.1 GHz 低噪声放大器

在本文中，一种超宽带（UWB）低噪声放大器（LNA）具有低功耗和高功率增益在180介绍了纳米 CMOS 技术。此处描述了设计 UWB-LNA 的传统方法的创新组合，即电阻反馈、电感串联峰值、噪声消除和电感退化技术。所提出的 LNA 由两个具有电阻反馈的共源放大器组成，其中噪声和功耗已分别通过使用噪声消除和电流重用技术来降低。此外，第一级中的电阻反馈降低了输入电阻，从而改善了输入阻抗匹配。在用于增加功率增益的第二级中，使用了具有电感串联峰值和噪声消除技术的公共源结构。分析结果与后期布局仿真结果吻合良好。布局后仿真显示增益为19±1.5dB 和 2.3 的噪声系数 (NF)总分贝-30.1 分贝带宽GHz 至 6.1GHz，而 S11 和 S22 小于-11D b。所提出的电路的品质因数为 9.9，与以前的作品相比有了显着提高。总功耗仅为 7.3mW，有效面积小于0.7毫米²。