Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO 2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau–Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively.

中文翻译：

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多晶铁电体HfZrO 2的多域模型的随机极化分布

通过数值模拟评估了器件尺寸缩小到与多晶铁电体HfZrO 2（HZO）的域尺寸相当的亚阈值摆幅（SS）和漏极引起的势垒降低（DIBL）。提出的多域建模涉及HZO中的极化随机位置和具有高斯分布的概率，以及与Landau-Khalatnikov方程相集成。与具有多个域的大型设备相比，具有几个域的小型设备的SS陡峭。N-DIBL（negative-DIBL）也可以通过使用此模型进行估算，并且负电容效应会显着延迟短通道效应。鳍式场效应晶体管和平面场效应晶体管的实验数据和仿真结果的趋势分别与纳米级和微米级器件一致。