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Mott barrier behavior of metal–TlGaSe 2 layered semiconductor junction
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-10-16 , DOI: 10.1088/1361-6641/abbaac
Buket Bilgen Kandemir 1 , Serdar Gren 1 , Mehmet Erdem 1 , Asuman Cengiz 1, 2 , Yasin Şale 1 , Aleksander K Fedotov 3 , Tofig G Mammadov 4 , MirHasan Yu Seyidov 1
Affiliation  

We report on the characteristics of metal- p -type high resistance TlGaSe 2 semiconductor junction barrier fabricated by deposition of indium and gold metals. The electrical properties of /TlGaSe 2 / semiconductor contacts were monitored as a function of temperature in the range of ∼80–300 K using current–voltage ( ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn1.gif] {$I-V$} ) and capacitance–voltage ( ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn2.gif] {$C - V$} ) measurements. Device characteristics of ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn3.gif] {$In$} /TlGaSe 2 / ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn4.gif] {$Au$} showed rectification properties. From forward bias ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sst...] {$I-V$}

中文翻译:

金属-TlGaSe 2层状半导体结的莫特势垒行为

我们报告了通过沉积铟和金金属制造的金属p型高电阻TlGaSe 2半导体结势垒的特性。使用电流-电压(/#IMG ## [http://ej.iop.org/images/0268]来监视/ TlGaSe 2 /半导体触点的电性能与温度的关系,温度范围约为80-300 K -1242 / 35/12/125010 / sstabbaacieqn1.gif] {$ IV $})和电容-电压(## IMG ## [http://ej.iop.org/images/0268-1242/35/12/ 125010 / sstabbaacieqn2.gif] {$ C-V $})测量。## IMG ##的设备特征[http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn3.gif] {$ In $} / TlGaSe 2 / ## IMG ## [ http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn4.gif] {$ Au $}显示了整流特性。从正偏## IMG ## [http://ej.iop.org/images/0268-1242/35/12/125010/sst ...
更新日期:2020-10-19
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