We report on the characteristics of metal- p -type high resistance TlGaSe 2 semiconductor junction barrier fabricated by deposition of indium and gold metals. The electrical properties of /TlGaSe 2 / semiconductor contacts were monitored as a function of temperature in the range of ∼80–300 K using current–voltage ( ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn1.gif] {$I-V$} ) and capacitance–voltage ( ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn2.gif] {$C - V$} ) measurements. Device characteristics of ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn3.gif] {$In$} /TlGaSe 2 / ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn4.gif] {$Au$} showed rectification properties. From forward bias ##IMG## [http://ej.iop.org/images/0268-1242/35/12/125010/sst...] {$I-V$}

中文翻译：

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金属-TlGaSe 2层状半导体结的莫特势垒行为

我们报告了通过沉积铟和金金属制造的金属p型高电阻TlGaSe 2半导体结势垒的特性。使用电流-电压（/＃IMG ## [http://ej.iop.org/images/0268]来监视/ TlGaSe 2 /半导体触点的电性能与温度的关系，温度范围约为80-300 K -1242 / 35/12/125010 / sstabbaacieqn1.gif] {$ IV $}）和电容-电压（## IMG ## [http://ej.iop.org/images/0268-1242/35/12/ 125010 / sstabbaacieqn2.gif] {$ C-V $}）测量。## IMG ##的设备特征[http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn3.gif] {$ In $} / TlGaSe 2 / ## IMG ## [ http://ej.iop.org/images/0268-1242/35/12/125010/sstabbaacieqn4.gif] {$ Au $}显示了整流特性。从正偏## IMG ## [http：//ej.iop.org/images/0268-1242/35/12/125010/sst ...