Investigation of dynamic thermal performance is a key to improve the heat management of high-power (HP) vertical light-emitting diodes (VLEDs). Specifically, the thermal time constant is a crucial parameter for optimizing the design and reliability of HP LEDs. Herein, the dynamic thermal behavior of seven HP ThinGaN VLEDs with different constructions was demonstrated. The LEDs’ thermal parameters were measured through the thermal transient tester system by a forward voltage technique. A three-stage of multiexponential function model was applied to divide the transient response curve into three regions with different thermal properties. This study focused on analyzing the first region that involved the chip region (epitaxial layer, wafer bonding layer, and submount) and chip bonding layer. The submounts of the LEDs under consideration include silicon carbide (SiC), silicon (Si), sapphire (Al 2 O 3 ), and germanium (Ge). The results revealed that with a qualified...

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不同底座的大功率ThinGaN垂直发光二极管的动态热性能研究

动态热性能的研究是改善高功率（HP）垂直发光二极管（VLED）的热管理的关键。具体来说，热时间常数是优化HP LED设计和可靠性的关键参数。在此，演示了七个具有不同结构的HP ThinGaN VLED的动态热行为。通过热瞬态测试仪系统，采用正向电压技术测量LED的热参数。应用三阶段多指数函数模型将瞬态响应曲线划分为三个具有不同热特性的区域。这项研究的重点是分析涉及芯片区域的第一个区域（外延层，晶圆键合层和基座）和芯片键合层。所考虑的LED的子基板包括碳化硅（SiC），硅（Si），蓝宝石（Al 2 O 3）和锗（Ge）。结果显示，合格的...