The Hall-effect (with mobility spectrum analysis) and capacitance measurements were combined with transmission electron microscopy for the study of molecular-beam epitaxy-grown n-type Hg1-xCdxTe (x = 0.22) films subjected to various operations used in the fabrication of p+-n photodiode structures. The operations included arsenic ion implantation, activation annealing and extra annealings aimed at investigation of the details of the p+-n junction formation. A detailed characterization of p+-type layers formed by the implantation was done. A high degree of arsenic activation by activation annealing was demonstrated, along with the annihilation of implantation-induced extended (dislocation loops) and quasi-point defects, and the disappearance of electrically active centres associated with them. The annealing was also shown to cause the activation of residual acceptors, changing the degree of electrical compensation in the n-'base' of some of the p+-n structures.

中文翻译：

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通过砷注入在 HgCdTe 中形成的 p ⁺型层的电学和微观表征

霍尔效应（具有迁移率谱分析）和电容测量与透射电子显微镜相结合，用于研究分子束外延生长的 n 型 Hg1-xCdxTe（x = 0.22）薄膜，这些薄膜经过各种操作用于制造p+-n 光电二极管结构。这些操作包括砷离子注入、激活退火和额外退火，旨在研究 p+-n 结形成的细节。对通过注入形成的 p+ 型层进行了详细表征。证明了通过激活退火进行的高度砷激活，以及注入引起的扩展（位错环）和准点缺陷的消失，以及与它们相关的电活性中心的消失。