The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe₂ quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe₂ quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

胶体量子点电子学的新兴技术为将易于理解的无机半导体的优点与分子系统的化学可加工性相结合提供了机会。迄今为止，关于量子点电子器件的大多数研究都集中在基于铅和镉硫族化物的材料上。除了与有毒金属的存在有关的环境问题外，由于难以将互补的n和p沟道晶体管集成到公共量子点有源层中，这些量子点也不十分适合CMOS电路中的应用。在这里，我们演示了通过使用不含重金属的CuInSe ₂量子点，我们可以解决毒性问题，并同时实现互补器件的直接集成以制备功能CMOS电路。具体地，利用的CuInSe的相同旋涂层₂的量子点，我们同时实现p -和Ñ声道晶体管和演示乖巧集成逻辑电路与低电压开关与标准CMOS电子元件兼容。