Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

需要能够满足第五代和第六代无线电信网络的超高频需求的廉价射频设备。但是，将高性能与具有成本效益的可扩展制造相结合已证明具有挑战性。在这里，我们报告了可以在微波和毫米波频段内工作的溶液处理氧化锌肖特基二极管的制造。使用晶片级粘合光刻技术制备完全共面的二极管，以图案化两个以约15 nm的间隙隔开的不对称金属电极，并通过从溶液中沉积氧化锌或掺杂铝的ZnO层来完成。肖特基二极管的最大固有截止频率超过100 GHz，