The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor structure. In doing so, it merges logic and memory functionalities at the single-device level, delivering some of the most pressing hardware-level demands for emerging computing paradigms. Here, we examine the potential of the ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models. We highlight the material- and device-level challenges involved in high-volume manufacturing in advanced technology nodes (≤10 nm), which are reminiscent of those encountered in the early days of high-K-metal-gate transistor development. We argue that the ferroelectric field-effect transistors can be a key hardware component in the future of computing, providing a new approach to electronics that we term ferroelectronics.

在与现代半导体制造工艺兼容的氧化物（如氧化f）中发现铁电，已导致先进微电子领域中铁电场效应晶体管的重新出现。铁电场效应晶体管在晶体管结构中结合了铁电材料和半导体。这样，它在单个设备级别合并了逻辑和存储器功能，从而为新兴的计算范例提供了一些最紧迫的硬件级别需求。在这里，我们研究了铁电场效应晶体管技术在当前嵌入式非易失性存储器应用以及未来的内存，仿生和替代计算模型中的潜力。K-金属栅晶体管的发展。我们认为，铁电场效应晶体管可能是未来计算的关键硬件组件，为我们称之为铁电子学的电子学提供了一种新方法。