Abstract Tunnel oxide passivated contact (TOPCon) industrial (244.32cm2) c-Si solar cell is fabricated in this paper. Both the ultra-thin silicon oxide layer and intrinsic polycrystalline silicon layer are deposited by low-pressure chemical vapor deposited (LPCVD). Then intrinsic polycrystalline silicon layers are doped by thermal diffusion of POCl3 in an industrial-scale quartz tube furnace. Experiment conditions like polycrystalline silicon thickness, diffusion temperature, diffusion time and POCL3 flow rate on the passivation quality of TOPCon structure are investigated in detail and low recombination current density ∼8 fA/m2 has been achieved for c-Si/SiOx/poly-Si(70nm)/SiNx structure at diffusion temperature 850°C. A variation about 30-40mV has been observed between the iVoc and Voc for 70 nm samples, which should be attributed to the metallization-induced degration. Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70nm thick poly-Si and 170nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. Finally, by optimizing the polysilion thickness and phosphorus diffusion, the champion solar cell efficiency of 22.81% is achieved, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2, FF of 81.62%.

中文翻译：

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丝网印刷 n 型工业太阳能电池，具有通过磷扩散掺杂的隧道氧化物钝化触点

摘要 本文制备了隧道氧化物钝化接触（TOPCon）工业（244.32cm2）c-Si太阳能电池。超薄氧化硅层和本征多晶硅层均通过低压化学气相沉积（LPCVD）沉积。然后在工业规模的石英管式炉中通过 POCl3 的热扩散掺杂本征多晶硅层。详细研究了多晶硅厚度、扩散温度、扩散时间和 POCL3 流速等实验条件对 TOPCon 结构钝化质量的影响，并实现了 c-Si/SiOx/poly-Si 的低复合电流密度~8 fA/m2 (70nm)/SiNx 结构，扩散温度为 850°C。对于 70 nm 样品，在 iVoc 和 Voc 之间观察到大约 30-40mV 的变化，这应该归因于金属化引起的退化。与从对称样品获得的结果不一致，在高于最佳扩散温度的扩散温度下，70nm 厚的多晶硅和 170nm 厚的多晶硅都发现了太阳能电池效率的提高。最后，通过优化多晶硅厚度和磷扩散，实现了 22.81% 的冠军太阳能电池效率，Voc 为 702.6 mV，Jsc 为 39.78 mA/cm2，FF 为 81.62%。