Abstract Hydrogen-doped indium oxide (IO:H) layers with very high carrier mobility have been developed by two-step fabrication procedure. In the first step IO:H films were deposited by radio frequency (RF) magnetron sputtering from In2O3 target in Ar/water vapour gas mixtures. Different sputtering powers and partial pressures of H2O (pH2O) have been explored and effects induced by changes of these process parameters on final film structure and on electro-optical properties have been investigated. In the second step a post-deposition annealing under vacuum were performed. During this treatment a complete and complex amorphous-crystalline transition occurred. Growth of large crystalline domains give rise to IO:H films with excellent carrier mobility values, up to 138 cm2/Vs. For each sputtering power used, the pH2O range has been identified which allows to obtain the highest carrier mobility value for IOH post-annealed films. Growth of large crystallites occurred in IO:H annealed films and, at this purpose, a selective chemical etching method has been developed to give better evidence for the polycrystalline grains. IO:H films appeared formed by fairly large crystalline domains with presence of sub-grains. Silicon heterojunction cells fabricated by using IO:H layers as front electrode, compared with those obtained from a conventional ITO showed improved short-circuit current density and the resulting conversion efficiency.

中文翻译：

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用于硅异质结太阳能电池的掺氢 In2O3：确定含水量和射频溅射功率的临界阈值

摘要 具有非常高载流子迁移率的掺氢氧化铟 (IO:H) 层已通过两步制造程序开发。在第一步中，IO:H 薄膜是通过射频 (RF) 磁控溅射从 In2O3 靶在 Ar/水蒸气气体混合物中沉积的。已经探索了不同的溅射功率和 H2O (pH2O) 分压，并研究了这些工艺参数的变化对最终薄膜结构和光电特性的影响。在第二步中，在真空下进行沉积后退火。在此处理期间，发生了完整且复杂的非晶-结晶转变。大晶畴的生长产生了具有优异载流子迁移率值的 IO:H 薄膜，高达 138 cm2/Vs。对于使用的每种溅射功率，已确定 pH2O 范围可以为 IOH 后退火薄膜获得最高的载流子迁移率值。在 IO:H 退火膜中发生大晶粒的生长，为此，已经开发了一种选择性化学蚀刻方法来为多晶粒提供更好的证据。IO:H 薄膜似乎由相当大的结晶域形成，并存在亚晶粒。与从传统 ITO 获得的电池相比，使用 IO:H 层作为前电极制造的硅异质结电池显示出改善的短路电流密度和由此产生的转换效率。已经开发出一种选择性化学蚀刻方法来为多晶晶粒提供更好的证据。IO:H 薄膜似乎由相当大的结晶域形成，并存在亚晶粒。与从传统 ITO 获得的电池相比，使用 IO:H 层作为前电极制造的硅异质结电池显示出改善的短路电流密度和由此产生的转换效率。已经开发出一种选择性化学蚀刻方法来为多晶晶粒提供更好的证据。IO:H 薄膜似乎由相当大的结晶域形成，并存在亚晶粒。与从传统 ITO 获得的电池相比，使用 IO:H 层作为前电极制造的硅异质结电池显示出改善的短路电流密度和由此产生的转换效率。