Abstract In this work, the effect of Mg doping on the performance of PbS quantum dot (QD) solar cells (QDSCs) is investigated. To elucidate that, PbS QDSCs with pristine ZnO and Mg-doped ZnO (ZMO) as electron transporting layers (ETLs) are fabricated, respectively. The current density-voltage (J-V) measurements are performed. The results show that the cell efficiency of the device with ZMO as an ETL is 9.46%, which increases about 75% compared to that of the pristine ZnO based device (5.41%). Enhanced short current density (Jsc) and fill factor (FF) are observed. It is demonstrated that Mg doping could passivate the surface defects and suppress the carrier recombination in ZnO ETL, thus resulting in larger bandgap and higher Fermi level (EF). The strategy of Mg-doped ZnO ETL provides a promising way for pushing solar cell performance to a high level.

中文翻译：

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Mg掺杂的ZnO层增强PbS量子点太阳能电池的电子传输

摘要 在这项工作中，研究了 Mg 掺杂对 PbS 量子点 (QD) 太阳能电池 (QDSC) 性能的影响。为了阐明这一点，分别制造了具有原始 ZnO 和 Mg 掺杂的 ZnO（ZMO）作为电子传输层（ETL）的 PbS QDSC。执行电流密度-电压 (JV) 测量。结果表明，采用 ZMO 作为 ETL 的器件的电池效率为 9.46%，与原始 ZnO 基器件的电池效率 (5.41%) 相比提高了约 75%。观察到增强的短路电流密度 (Jsc) 和填充因子 (FF)。结果表明，Mg掺杂可以钝化表面缺陷并抑制ZnO ETL中的载流子复合，从而导致更大的带隙和更高的费米能级（EF）。