Abstract The electrical properties of WO3 thin films vary significantly depending on the growth conditions. In this work, the influence of O2 gas on the band gap of WO3 thin films during growth was investigated via electronic structure characterization using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray emission spectroscopy (XES). A substantial decrease in the electrical conductivity of the WO3 films was observed with an increase in the O2 partial pressure during growth. Spectral differences in the peak energy and intensity were apparent for WO3 films grown under only Ar and those grown in Ar:O2. It is difficult to explain the acquired spectrum of WO3 with oxygen defects through the rigid-band model in terms of the simple addition of electrons to the conduction band of WO3. Our results show that an oxygen deficiency in WO3 moves the conduction band to the Fermi edge.

中文翻译：

---

不同退火温度和气流条件下制备的WO3薄膜电子结构的软X射线光谱研究

摘要 WO3 薄膜的电学性质随生长条件的不同而显着变化。在这项工作中，通过使用 X 射线光电子能谱 (XPS)、X 射线吸收光谱 (XAS) 和 X 射线发射光谱的电子结构表征，研究了 O2 气体在生长过程中对 WO3 薄膜带隙的影响(XES)。随着生长过程中 O2 分压的增加，观察到 WO3 薄膜的电导率显着降低。对于仅在 Ar 下生长的 WO3 薄膜和在 Ar:O2 中生长的那些薄膜，峰值能量和强度的光谱差异是明显的。简单地将电子添加到 WO3 的导带上，很难通过刚带模型来解释获得的具有氧缺陷的 WO3 光谱。