Abstract This article focuses on the fabrication of highly ordered Cu/TiO2/Ti nanopore array membrane memristors by using two-step anodization and vacuum evaporation methods and exploration the effects of oxidation parameters such as anodization voltage and electrolyte temperature on device performance. The performance test results show that this novel ordered TiO2 nanopore array membrane structure can effectively regulate the distribution of the local electric field that restricts the growth path of the conductive filaments (CFs), which thereby greatly improves the stability and yield of the devices. In addition, it is found that through adjusting the process parameters, such as anodization voltage and electrolyte temperature, the lateral (pore diameter) and longitudinal (pore depth) dimensions of the TiO2 nanopores can be regulated for further optimizing device performance. These exciting results demonstrate that the highly ordered TiO2 nanopore array structure can offer a tangible effectiveness and controllability for improving the stability of memristors, suggesting the strategy seems to have an important scientific significance and application value.

中文翻译：

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来自高度有序的 Cu/TiO2/Ti 纳米孔阵列膜忆阻器的稳定电阻切换特性

摘要 本文重点研究了采用两步阳极氧化和真空蒸发方法制备高度有序的Cu/TiO2/Ti纳米孔阵列膜忆阻器，并探索了阳极氧化电压和电解液温度等氧化参数对器件性能的影响。性能测试结果表明，这种新型有序TiO2纳米孔阵列膜结构可以有效调节限制导电丝（CFs）生长路径的局部电场分布，从而大大提高了器件的稳定性和良率。此外，发现通过调整阳极氧化电压和电解液温度等工艺参数，可以调节 TiO2 纳米孔的横向（孔径）和纵向（孔深度）尺寸，以进一步优化器件性能。这些令人兴奋的结果表明，高度有序的 TiO2 纳米孔阵列结构可以为提高忆阻器的稳定性提供切实的有效性和可控性，表明该策略似乎具有重要的科学意义和应用价值。